Direct measurement of the effective infrared dielectric response of a highly doped semiconductor metamaterial(Article)

Nanotechnology

Journal Article

We have investigated the effective dielectric response of a subwavelength grating made of highly doped semiconductors (HDS) excited in reflection, using numerical simulations and spectroscopic measurement. The studied system can exhibit strong localized surface resonances and has, therefore, a great potential for surface-enhanced infrared absorption (SEIRA) spectroscopy application. It consists of a highly doped InAsSb grating deposited on lattice-matched GaSb. The numerical analysis demonstrated that the resonance frequencies can be inferred from the dielectric function of an equivalent homogeneous slab by accounting for the complex reflectivity of the composite layer. Fourier transform infrared reflectivity (FTIR) measurements, analyzed with the Kramers-Kronig conversion technique, were used to deduce the effective response in reflection of the investigated system. From the knowledge of this phenomenological dielectric function, transversal and longitudinal energy-loss functions were extracted and attributed to transverse and longitudinal resonance modes frequencies. © 2017 IOP Publishing Ltd.

M.b Kazan

T.c,d Taliercio

L.c,d Cerutti

S.a Blaize

A.a Bruyant

Publication

Year of publication: 2017

Identifiers

ISSN: 09574484

Locators

DOI: 10.1088/1361-6528/aa5ddf

Alternative Titles